INGRID Parameters with UltraDAS + SDSU Gen.2
More information for the INGRID Instrument may be found here.
Device Identification
Operational Characteristics
Speed |
Slow |
Bias(ADU) |
14000
|
Gain(e/ADU)
see note 1 |
3.9 - 4.1 |
Noise(e)
see note 2 |
18-24 |
Noise (ADU) |
4.5 to 6.0 |
Linear to (ADU)
see note 3 |
~2% (0 - 12000ADU) |
Readout time (s) |
0.76 |
Notes:
- Apparent gain change dependent on pixel signal level occurs as an
intrinsic function of the device. As full well is approached, the gain tends
towards the lower value.
- Noise figures given for simple cds frame image readout. Noise can be
reduced by using multiple non-destructive readout (mndr) modes.
- An explanation of method is given here.
NB 'Fast' readout speed is not available.
Binning
Not possible with this type of detector
Linearity plot
.
Vertical CTE. |
Not applicable with this type of detector. |
Horizontal CTE |
Not applicable with this type of detector.
|
Physical Characteristics
X Pixel size |
18.5 microns |
Y Pixel size |
18.5 microns |
X size in pixels of digitised area |
1024 |
Y size in pixels of digitised area |
1024 |
X size of useful imaging area |
1024 |
Y size of useful imaging area |
1024 |
X start of useful imaging area |
1 |
Y start of useful imaging area |
1 |
LN2 capacity of cryostats |
Main cryostat 4.5 litre plus additional 2.5 litre cryostat in place
of the closed cycle cooler |
Pixel Scale Ingrid + Naomi
|
0.04" per pixel
|
Field of view Ingrid +Naomi
|
39" x 39" |
Operational Parameters
Optimum operating temperature |
70K |
Maximum operating temperature |
100K |
Measured characteristics
Quantum Efficiency (From Rockwell measurements)
~58% at J (1.2um) , ~58% at H(1.65um) , ~62% at (2.2um)
Note that the array does not cut off at 800nm. Sensitivity can still
be seen at 650nm !
Dark current |
3e-/sec/pix @70K More info available here. |
Full well bloom limit |
120,000 electrons |
Hot pixels
|
<1%. More info is available here.
|
|