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INGRID Parameters with UltraDAS + SDSU Gen.2

More information for the INGRID Instrument may be found here.

Device Identification

Chip name  INGRID
Year of manufacture 1998
Serial number
First light on La Palma  March 2000
Description Rockwell 1024 x 1024 HgCdTe SWIR FPA

Operational Characteristics

see note 1
 3.9 - 4.1
see note 2
Noise (ADU)
4.5 to 6.0
Linear to (ADU)
see note 3
~2% (0 - 12000ADU)
Readout time (s)
  1. Apparent gain change dependent on pixel signal level occurs as an intrinsic function of the device. As full well is approached, the gain tends towards the lower value.
  2. Noise figures given for simple cds frame image readout. Noise can be reduced by using multiple non-destructive readout (mndr) modes.
  3. An explanation of method is given here.

NB 'Fast' readout speed is not available.


Not possible with this type of detector

Linearity plot

Vertical CTE.  Not applicable with this type of detector.
Horizontal CTE  Not applicable with this type of detector.

Physical Characteristics

X Pixel size 18.5 microns
Y Pixel size  18.5 microns 
X size in pixels of digitised area  1024
Y size in pixels of digitised area 1024
X size of useful imaging area 1024
Y size of useful imaging area 1024
X start of useful imaging area 1
Y start of useful imaging area 1
LN2 capacity of cryostats Main cryostat 4.5 litre plus additional 2.5 litre cryostat in place of the closed cycle cooler 
Pixel Scale Ingrid + Naomi
0.04" per pixel
Field of view Ingrid +Naomi
 39" x 39"


Operational Parameters

Optimum operating temperature  70K
Maximum operating temperature 100K


Measured characteristics

Quantum Efficiency (From Rockwell measurements)

~58% at J (1.2um) , ~58% at H(1.65um) , ~62% at (2.2um)

Note that the array does not cut off at 800nm. Sensitivity can still be seen at 650nm !
Dark current   3e-/sec/pix  @70K More info available here.
Full well bloom limit 120,000 electrons
Hot pixels
<1%. More info is available here.

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Last modified: 21 November 2010