EEV12 Parameters with UltraDAS + SDSU Gen.2
NB these figures refer to eev12 when it was used
with a Gen 2 controller. Converted to Gen 3 on the 25th Jan. 2007
Device Identification
| Chip name |
EEV12 |
| Year of manufacture |
1998 |
| Serial number |
A5500-5 |
| First light on La Palma |
May 1998 |
| Description |
EEV-4280 thinned and AR coated, converted
to run with UltraDAS January 2001. |
Operational Characteristics
| Speed |
Slow |
Fast |
| Bias (ADU) |
1244 |
810 |
| Gain (e/ADU) |
1.16 |
2.3 |
| Noise (e) |
3.5 |
6.0 |
| Noise (ADU) |
3.0 |
2.6 |
Linear to (ADU)
{see graphs below} |
63K |
63K |
| Readout time (s) |
59 |
42 |
Windowing is available.
Linearity
Linearity was measured by R.Hijmering on the 7th January 2002 using
this method
| Vertical CTE |
>0.999998 |
| Horizontal CTE |
>0.999998 |
Physical Characteristics
| Pixel Scale (isis blue) |
0.19 arcsecs/pixel |
| X Pixel size |
13.5 microns |
| Y Pixel size |
13.5 microns |
| X size in pixels of digitised area |
2148 |
| Y size in pixels of digitised area |
4200 |
| X size of useful imaging area |
2048 |
| Y size of useful imaging area |
4100 |
| X start of useful imaging area |
51 |
| Y start of useful imaging area |
1 |
| LN2 capacity of cryostat |
2.5 litres |
| Cryostat window thickness |
4 mm |
| Distance from window to CCD |
10.0mm measured optically |
| Cryostat window size |
36 x 66 mm |
Operational Parameters
| Operating temperature |
158K |
| Preferred amplifier |
R ( L has an HCTE problem at high readout speeds ) |
Measured Characteristics
Quantum Efficiency
Full QE curve for EEV4280 in tabulated form,
measured at ATC March 99.
Dark current
|
Temperature
|
Electrons per pixel per hour
|
|
-120C
|
0.7
|
|
-105C
|
5.1
|
| Full well bloom limit |
240000 electrons |
| Chip flatness |
A one dimensional scan down the central column for the CCD showed a
2 micron bow |
| Cosmetics |
See Dark frame |
| Cosmic Ray count |
~2000 events/chip/hour at sea level |
| Fringing |
See graph of fringe amplitude vs wavelength
for EEV12 |
| 
