EEV12 Parameters with UltraDAS + SDSU Gen.2
NB these figures refer to eev12 when it was used
with a Gen 2 controller. Converted to Gen 3 on the 25th Jan. 2007
Device Identification
Chip name |
EEV12 |
Year of manufacture |
1998 |
Serial number |
A5500-5 |
First light on La Palma |
May 1998 |
Description |
EEV-4280 thinned and AR coated, converted
to run with UltraDAS January 2001. |
Operational Characteristics
Speed |
Slow |
Fast |
Bias (ADU) |
1244 |
810 |
Gain (e/ADU) |
1.16 |
2.3 |
Noise (e) |
3.5 |
6.0 |
Noise (ADU) |
3.0 |
2.6 |
Linear to (ADU)
{see graphs below} |
63K |
63K |
Readout time (s) |
59 |
42 |
Windowing is available.
Linearity
Linearity was measured by R.Hijmering on the 7th January 2002 using
this method

Vertical CTE |
>0.999998 |
Horizontal CTE |
>0.999998 |
Physical Characteristics
Pixel Scale (isis blue) |
0.19 arcsecs/pixel |
X Pixel size |
13.5 microns |
Y Pixel size |
13.5 microns |
X size in pixels of digitised area |
2148 |
Y size in pixels of digitised area |
4200 |
X size of useful imaging area |
2048 |
Y size of useful imaging area |
4100 |
X start of useful imaging area |
51 |
Y start of useful imaging area |
1 |
LN2 capacity of cryostat |
2.5 litres |
Cryostat window thickness |
4 mm |
Distance from window to CCD |
10.0mm measured optically |
Cryostat window size |
36 x 66 mm |
Operational Parameters
Operating temperature |
158K |
Preferred amplifier |
R ( L has an HCTE problem at high readout speeds ) |
Measured Characteristics
Quantum Efficiency
Full QE curve for EEV4280 in tabulated form,
measured at ATC March 99.
Dark current
Temperature
|
Electrons per pixel per hour
|
-120C
|
0.7
|
-105C
|
5.1
|
Full well bloom limit |
240000 electrons |
Chip flatness |
A one dimensional scan down the central column for the CCD showed a
2 micron bow |
Cosmetics |
See Dark frame |
Cosmic Ray count |
~2000 events/chip/hour at sea level |
Fringing |
See graph of fringe amplitude vs wavelength
for EEV12 |
|