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Warning : these figures refer to EEV12 when it was used with a Dutch controller and are for reference only. EEV12 Parameters
Device Identification
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| Chip name | EEV12 |
| Year of manufacture | 1998 |
| Serial number | A5500-5 |
| First light on La Palma | May 1998 |
| Description | EEV-4280 thinned and AR coated |
| Speed |
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| Linearity |
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| Bias (ADU) |
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| Gain (e/ADU) |
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| Noise (e) |
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| Readout time (s) |
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| Vertical CTE | >0.999998 |
| Horizontal CTE | >0.999998 |
| Pixel Scale (isis blue) | 0.19 arcsecs/pixel |
| X Pixel size | 13.5 microns |
| Y Pixel size | 13.5 microns |
| X size in pixels of digitised area | 2148 |
| Y size in pixels of digitised area | 4200 |
| X size of useful imaging area | 2048 |
| Y size of useful imaging area | 4100 |
| X start of useful imaging area | 50 |
| Y start of useful imaging area | 0 |
| LN2 capacity of cryostat | 2.5 litres |
| Cryostat window thickness | 4 mm |
| Distance from window to CCD | 7.29mm (10.0mm measured optically ) |
| Cryostat window size | 36 x 66 mm |
| Operating temperature | 153K |
| Preferred amplifier | L ( R provides the same performance ) |
Quantum Efficiency
Full QE curve for EEV4280 in tabulated form,
measured at ATC March 99.
Dark current
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| Full well bloom limit | 240000 electrons |
| Chip flatness | A one dimensional scan down the central column for the CCD showed a 2 micron bow |
| Cosmetics | |
| Cosmic Ray count | ~2000 events/chip/hour at sea-level |
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