EEV10 Parameters
Device Identification
Chip name EEV10
Year of manufacture 1997
Serial number 5383-17-7
First light on La Palma July 1997
Description .
N.B. Available on shared risk basis (no guaranteed performance)
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Operational Characteristics
Measurements made on UES 7/8/97
Speed
|
Standard
|
Quick
|
Turbo
|
Nonastro
|
Bias(ADU)
|
. |
. |
. |
. |
Gain(e/ADU)
|
0.75
|
0.75
|
0.89
|
1.19
|
Noise(e)
|
7.5
|
10.9
|
12.5
|
12.0
|
Linear to(ADU)
|
. |
. |
. |
. |
Readout time(s)
|
300
|
210
|
180
|
160
|
Standard linearity
Turbo Linearity
Nonastro Linearity
Physical Characteristics
Pixel Scale (isis blue) 0.19 arc/pixel
X Pixel size 13.5 microns
Y Pixel size 13.5 microns
X size in pixels of digitised area 2148
Y size in pixels of digitised area 4200
X size of useful imaging area 2048
Y size of useful imaging area 4096
X start of useful imaging area 50
Ystart of useful imaging area 0
LN2 capacity of cryostat 2.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD . mm
Cryostat window size 36mm x 66mm
Operational Parameters
Flooding type none
Operating temperature 153K
Prefered amplifier L (R provides similar performance )
Network name CCD1
Anti-blooming available .
Orientation of instrument for prefered output
Telemetry values : V+SL -17.70V V- -16.00V
V+ -6.00V V-SL 2.40V
RD 2.00V VSS -9.00V
OG1 -13.00V V++ -5.00V
R-SL 2.00V R- -15.00V
R+ -5.00V R+SL -18.00V
ODL 7.00V ODH 17.50V
OG2H -12.00V OG2L 3.00V
DMP 5.00V BG 7.00V
H+ -5.00V H++ -2.00V
H-SL 2.00V H- -14.00V
H+SL -18.00V
Measured Characteristics
Quantum Efficiency
Peak non-uniformity in QE across chip .
Dark current ~0 e/hour
Point spread function .
Full well bloom limit ~180000 electrons
Chip flatness 10 micron concave bow
Cosmetics 5 pixel/column defects
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