EEV13 Parameters with UltraDAS + SDSU Gen.2
NB these figures refer to EEV13 when it was used
with a Gen. 2 controller. Converted to Gen. 3 on the 13th Feb. 2007
Device Identification
| Chip name |
EEV13 |
| Year of manufacture |
1999 |
| Serial number |
7061-8-3 |
| First light on La Palma |
July 2001 |
| Description |
EEV-4280 thinned and AR coated |
Operational Characteristics
|
Speed
|
Slow
|
Fast
|
|
Bias(ADU)
|
1060
|
870
|
|
Gain(e/ADU)
|
1.16
|
2.3
|
|
Noise(e)
|
3.6
|
5.4
|
|
Noise (ADU) |
3.1 |
2.4 |
|
Linear to (ADU)
|
+/-1.2% to 60K
|
+/-0.5% to 60K
|
|
Readout time (s)
|
55
|
37
|
Binning
All binning modes up to 5 x 2 have been tested with no increase in noise.
Linearity measured on the 2nd January 2002 using this method
| Vertical CTE |
0.999994 |
| Horizontal CTE |
0.9999974 |
Physical Characteristics
| X Pixel size |
13.5 microns |
| Y Pixel size |
13.5 microns |
| X size in pixels of digitised area |
2148 |
| Y size in pixels of digitised area |
4200 |
| X size of useful imaging area |
2048 |
| Y size of useful imaging area |
4100 |
| X start of useful imaging area |
51 |
| Y start of useful imaging area |
0 |
| LN2 capacity of cryostat |
2.5 litres |
| Cryostat window thickness |
4 mm |
| Distance from window to CCD |
10.4 mm measured optically |
| Cryostat window size |
36 x 66 mm |
Operational Parameters
| Operating temperature |
153K |
| Preferred amplifier |
R |
Measured Characteristics
Quantum Efficiency
Full QE curve for EEV4280 in tabulated form,
measured at ATC March 99
| Dark current |
none measureable @153K |
| Full well bloom limit |
240,000 electrons |
| Chip flatness |
|
Cosmetics
|
Using RHS amplifier black columns at 1079, 1080, 1674, 1675, 1676, 1764, 1765, 1766, 1767
See Dark Frame and Flat
Field |
| Cosmic Ray count |
~2000 events/chip/hour |
Fringing. See the graph below of fringe amplitude vs wavelength
for an EEV.
 |
|
