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EEV12 Parameters with UltraDAS + SDSU Gen.2

NB these figures refer to eev12 when it was used with a Gen 2 controller. Converted to Gen 3 on the 25th Jan. 2007

Device Identification

Chip name EEV12
Year of manufacture 1998
Serial number A5500-5
First light on La Palma May 1998
Description EEV-4280 thinned and AR coated, converted to run with UltraDAS January 2001.

Operational Characteristics

Speed Slow Fast
Bias (ADU) 1244  810 
Gain (e/ADU) 1.16 2.3
Noise (e) 3.5 6.0
Noise (ADU) 3.0 2.6
Linear to (ADU)
{see graphs below}
63K 63K
Readout time (s) 59 42

Windowing is available.


Linearity was measured by R.Hijmering on the 7th January 2002 using this method

Vertical CTE >0.999998
Horizontal CTE >0.999998

Physical Characteristics

Pixel Scale (isis blue) 0.19 arcsecs/pixel
X Pixel size 13.5 microns
Y Pixel size 13.5 microns
X size in pixels of digitised area 2148
Y size in pixels of digitised area 4200
X size of useful imaging area 2048
Y size of useful imaging area  4100
X start of useful imaging area 51
Y start of useful imaging area 1
LN2 capacity of cryostat 2.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD 10.0mm measured optically 
Cryostat window size 36 x 66 mm

Operational Parameters

Operating temperature 158K
Preferred amplifier R ( L has an HCTE problem at high readout speeds )

Measured Characteristics

Quantum Efficiency

Full QE curve for EEV4280 in tabulated form, measured at ATC March 99.

Dark current

Electrons per pixel per hour

Full well bloom limit 240000 electrons
Chip flatness A one dimensional scan down the central column for the CCD showed a 2 micron bow
Cosmetics See Dark frame
Cosmic Ray count ~2000 events/chip/hour at sea level
Fringing See graph of fringe amplitude vs wavelength for EEV12

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Last modified: 21 March 2014