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Warning : these figures refer to SITe2 when it was used with a Dutch controller and are for reference only.
 

SITe2 Parameters



Device Identification

Chip name SITe2
Year of manufacture 1995
Serial number  4321ADR01-01
First light on La Palma December 1997
Description Photo of Site chip in cryostat

Operational Characteristics

     
    .
    Full Frame Readout(s)
    1K Square Readout
    Gain e/ADU
    Noise e
    Bias ADU
    Linearity
    Standard
    255
    87
    1.13
    6.6
    906
    50K
    Quick
    126
    55
    1.41
    7.5
    625
    50k
    Turbo
    91
    45
    1.95
    11.7
    301
    50k
    2x2 Binned
    80
    -
    1.1
    5.4
    1061
    50k
Binning - NB when binning the readout speed will be TURBO regardless of the readout speed selected.
 
Vertical CTE 0.9999993
Horizontal CTE  0.999999

Physical Characteristics

Pixel Scale (JKT A&G) 0.33 arc/pixel
Field of view (JKT A&G) 10 x 10 arcmin (unvignetted); 11 x 11 arcmin (vignetted,70% light loss)
X Pixel size 24 microns
Y Pixel size 24 microns
X size in pixels of digitised area 2148
Y size in pixels of digitised area 2148
X size of useful imaging area 2048
Y size of useful imaging area 2048
X start of useful imaging area  20
Ystart of useful imaging area 1
LN2 capacity of cryostat  2.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD 10.3 mm
Cryostat window size 80mm diameter

Operational Parameters

Flooding type  none
Operating temperature 156K
Preferred amplifier  A, (B is possible backup but noisy >20e)
Network name CCD4
Anti-blooming available no

Measured Characteristics

Quantum Efficiency

 
 
Dark current 1 e/hour
Full well bloom limit 130000 e
Chip flatness 230 micron convex bow
Cosmetics Two blocked column clusters close to edges of chip
There are several hundred dark spots that cover a large part of the chip, they do however flatfield out please see
the defect map Courtesy of Richard Hijmering.


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Last modified: 21 November 2010