| LOR1a Parameters
 
 
Device Identification
Chip name                             LOR1a Year of manufacture                   1997 Serial number                         W20-1-1 First light on La Palma               June 1997 Description: Replacement for failed LOR1 using same cryostat 
Operational Characteristics
Measurements made in lab. 
| Speed             | Standard       | Quick          | Turbo          |  
| Bias(ADU) | 2486 | 1311 | 269 |  
| Gain(e/ADU) | 0.63 | 0.92 | 1.41 |  
| Noise(e) | 6.4 | 8.1 | 11.1 |  
| Linear to(ADU) | 60K (see below)
 | 40K (see below)
 | 25K (see below)
 |  
| Readout time(s) | . | 142 | . |  Standard linearity   Quick Linearity   Turbo linearity   Vertical CTE                          0.999991 Horizontal CTE                        0.99956 
Physical Characteristics
Pixel Scale (isis blue)               0.21 arc/pixel X Pixel size                          15 microns Y Pixel size                          15 microns X size in pixels of digitised area    2148 Y size in pixels of digitised area    2148 X size of useful imaging area         2048 Y size of useful imaging area         2048 X start of useful imaging area        ? Ystart of useful imaging area         ? LN2 capacity of cryostat              2.5 litres Cryostat window thickness             4mm Distance from window to CCD           . mm Cryostat window size                  . 
Operational Parameters
Flooding type                         . Operating temperature                 153K Prefered amplifier                    R Network name                          CCD2 Anti-blooming available               no Orientation of instrument for prefered output Telemetry values :RD    6.49V     V-   -15.00V     H+SL  -17.99V
  OD    6.99V     H++    0.00V     R-SL    1.59V  OG  -10.00V     H-   -11.99V     R+SL  -17.99V  VSS  -6.99V     R+    -1.99V  ABG -10.00V     R-   -11.99V  BG    2.99V     V-SL   2.19V  ABD   6.99V     V+SL -17.50V  V++  -3.99V     H-SL   1.59V 
Measured Characteristics
Quantum Efficiency     Peak non-uniformity in QE across chip  . Dark current                           11 e/hour Point spread function                  . Full well bloom limit                  148000 elctrons Chip flatness                          21 micron convex bow Cosmetics: Column defect down centre of chip |