EEV3 Parameters
Device Identification
Chip name EEV3
Year of manufacture ?
Serial number ?
Technology ?
Anti reflection coating Metachrome
First light on La Palma April 1991
Description ?
Operational Characteristics
Measurements made on ISIS red 3/4/95
Speed
|
Slow
|
Standard
|
Quick
|
Turbo
|
Nonastro
|
Bias(ADU)
|
3160
|
5007
|
4234
|
3234
|
3567
|
Gain(e/ADU)
|
0.71
|
0.79
|
1.10
|
1.66
|
3.27
|
Noise(e)
|
3.73
|
3.47
|
6.00
|
9.82
|
20.5
|
Linear to(ADU)
|
60k
|
60k
|
60k
|
40k
|
25k
|
Readout time(s)
|
193
|
132
|
77
|
63
|
47
|
Vertical CTE 0.99999
Horizontal CTE 0.99999
Physical Characteristics
Pixel Scale (?) ? arc/pixel
Field of view (?) ?
X Pixel size 22.5 microns
Y Pixel size 22.5 microns
X size in pixels of digitised area 1280
Y size in pixels of digitised area 1180
X size of useful imaging area 1242
Y size of useful imaging area 1152
X start of useful imaging area 17
Ystart of useful imaging area 0
LN2 capacity of cryostat 1.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD ? mm
Cryostat window size ?
Operational Parameters
Flooding type none
Operating temperature 147K
Prefered amplifier ?
Network name CCD1
Anti-blooming available no
Orientation of instrument for prefered output
Telemetry values : RD ?V V- ?V H+SL ?V
OD ?V H++ ?V R-SL ?V
OG ?V H- ?V R+SL ?V
VSS ?V R+ ?V
ABG ?V R- ?V
BG ?V V-SL ?V
ABD ?V H-SL ?V
Measured Characteristics
Quantum Efficiency @400nm 19%
@530nm 38%
@650nm 55%
Peak non-uniformity in QE across chip ?
Dark current 8 e/hour
Point spread function ?
Full well bloom limit ?
Chip flatness ? micron ? bow
Cosmetics ?
| 
