|
Warning : these figures refer
to EEV12 when it was used with a Dutch controller and
are for reference only.
EEV12 Parameters
Device Identification
| Chip name |
EEV12 |
| Year of manufacture |
1998 |
| Serial number |
A5500-5 |
| First light on La Palma |
May 1998 |
| Description |
EEV-4280 thinned and AR coated |
Operational Characteristics
| Speed |
Standard
|
Quick
|
Turbo
|
Binned
|
| Linearity |
1% to 65K
|
1% to 65K
|
1% to 43K
|
|
| Bias (ADU) |
930
|
820
|
670
|
390
|
| Gain (e/ADU) |
1.0
|
1.2
|
1.4
|
1.4
|
| Noise (e) |
4.5
|
4.4
|
6
|
5
|
| Readout time (s) |
225
|
180
|
165
|
|
Binning - NB when binning the readout speed will always be TURBO
regardless of the readout speed selected.
| Vertical CTE |
>0.999998 |
| Horizontal CTE |
>0.999998 |
Physical Characteristics
| Pixel Scale (isis blue) |
0.19 arcsecs/pixel |
| X Pixel size |
13.5 microns |
| Y Pixel size |
13.5 microns |
| X size in pixels of digitised area |
2148 |
| Y size in pixels of digitised area |
4200 |
| X size of useful imaging area |
2048 |
| Y size of useful imaging area |
4100 |
| X start of useful imaging area |
50 |
| Y start of useful imaging area |
0 |
| LN2 capacity of cryostat |
2.5 litres |
| Cryostat window thickness |
4 mm |
| Distance from window to CCD |
7.29mm (10.0mm measured optically ) |
| Cryostat window size |
36 x 66 mm |
Operational Parameters
| Operating temperature |
153K |
| Preferred amplifier |
L ( R provides the same performance ) |
Measured Characteristics
Quantum Efficiency
Full QE curve for EEV4280 in tabulated form,
measured at ATC March 99.
Dark current
|
Temperature
|
Electrons per pixel per hour
|
|
-120C
|
0.7
|
|
-105C
|
5.1
|
| Full well bloom limit |
240000 electrons |
| Chip flatness |
A one dimensional scan down the central column for the CCD showed a
2 micron bow |
| Cosmetics |
|
| Cosmic Ray count |
~2000 events/chip/hour at sea-level |
| 
