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EEV10a Parameters for UltraDAS + SDSU Gen.2


NB these figures refer to EEV10a when it was used with a Gen. 2 controller. Converted to Gen. 3 on the 22nd March 2007

Device Identification

Chip name EEV10a
Year of manufacture 1997
Serial number 7043-16-4
First light on La Palma March 1998
Description EEV42 thinned, converted to run with UltraDAS August 2000

Operational Characteristics

 
Speed 
Slow
Fast
Bias(ADU)
630
570
Gain(e/ADU)
1.3
2.6
Noise(e)
3.5
5

Noise (ADU)

2.7

1.9

Linear to (ADU)
+/-0.5% to 60k
+/-1% to 55k
Readout time (s)
55
37
Binning

 All binning modes up to 4 x 2 have been tested in both speeds with no increase in noise.

Linearity measured using the this method on the 18th January 2002



 
 
 
Vertical CTE >0.999999
Horizontal CTE >0.999999

Physical Characteristics

Pixel Scale (isis blue) 0.19 arcsecs/pixel
X Pixel size 13.5 microns
Y Pixel size 13.5 microns
X size in pixels of digitised area 2148
Y size in pixels of digitised area 4200
X size of useful imaging area 2048
Y size of useful imaging area 4100
X start of useful imaging area 51
Y start of useful imaging area 0
LN2 capacity of cryostat 2.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD 10 mm
Cryostat window size 36 x 66 mm

Operational Parameters

Operating temperature 153K
Preferred amplifier L( R provides the same performance )
Anti-blooming available no

Measured Characteristics

Quantum Efficiency

Full QE curve for EEV4280 in tabulated form, measured at ATC March 99
 
 
Dark current 4 e/hour @ -120 degrees C
Full well bloom limit  ~150000 electrons
Chip flatness Profile scan shows centre section to be flat to < 1 micron
Cosmetics There are about 2ish pixel/column defects plus a cluster of single pixel  defects. See dark frame.
Cosmic Ray count ~2000 events/chip/hour
Fringing. See below a graph of fringe amplitude vs wavelength for an EEV.



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Last modified: 21 November 2010