EEV10a Parameters for UltraDAS + SDSU Gen.3
Device Identification
| Chip name |
EEV10a |
| Year of manufacture |
1997 |
| Serial number |
7043-16-4 |
| First light on La Palma |
March 1998 |
| Description |
EEV42 thinned, converted to run with SDSU
Gen.3 23 March 2007 |
Operational Characteristics
|
Speed
|
Slow
|
Fast
|
|
Bias(ADU)
|
1990
|
1240
|
|
Gain(e/ADU)
|
1.2
|
2.43
|
|
Noise(e)
|
4.16
|
5.38
|
|
Noise (ADU) |
3.5 |
2.2 |
|
Linear to (ADU)
|
+/-0.2% to 65k
|
+/-0.3% to 65k
|
|
Readout time (s)
|
47
|
30
|
Binning
All binning modes up to 4 x 2 have been tested in both
speeds with no increase in noise.
Linearity
| Vertical CTE |
>0.999999 |
| Horizontal CTE |
>0.999999 |
Physical Characteristics
| Pixel Scale |
0.4 arcsecs/pixel on IDS235
0.19 arcsecs/pixel on ISIS Blue
|
| X Pixel size |
13.5 microns |
| Y Pixel size |
13.5 microns |
| X size in pixels of digitised area |
2148 |
| Y size in pixels of digitised area |
4200 |
| X size of useful imaging area |
2048 |
| Y size of useful imaging area |
4100 |
| X start of useful imaging area |
51 |
| Y start of useful imaging area |
0 |
| LN2 capacity of cryostat |
2.5 litres |
| Cryostat window thickness |
4 mm |
| Distance from window to CCD |
10 mm |
| Cryostat window size |
36 x 66 mm |
Operational Parameters
| Operating temperature |
153K |
| Preferred amplifier |
L( R provides the same performance ) |
| Anti-blooming available |
no |
Measured Characteristics
Quantum Efficiency
Full QE curve for EEV4280 in tabulated form,
measured at ATC March 99
| Dark current |
4 e/hour @ -120 degrees C |
| Full well bloom limit |
~150000 electrons |
| Chip flatness |
Profile scan shows centre section to be flat to < 1 micron |
| Cosmetics |
There are about 2ish pixel/column defects plus a cluster of single
pixel defects. See dark frame. |
| Cosmic Ray count |
~2000 events/chip/hour |
Fringing. See below a graph of fringe amplitude vs wavelength
for an EEV.
 |
| 
