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EEV10a Parameters for UltraDAS + SDSU Gen.3



Device Identification

Chip name EEV10a
Year of manufacture 1997
Serial number 7043-16-4
First light on La Palma March 1998
Description EEV42 thinned, converted to run with SDSU Gen.3 23 March 2007

Operational Characteristics

 
Speed 
Slow
Fast
Bias(ADU)
1990
1240
Gain(e/ADU)
1.2
2.43
Noise(e)
4.16
5.38

Noise (ADU)

3.5

2.2

Linear to (ADU)
+/-0.2% to 65k
+/-0.3% to 65k
Readout time (s)
47
30
Binning

 All binning modes up to 4 x 2 have been tested in both speeds with no increase in noise.

Linearity



 
 
 
Vertical CTE >0.999999
Horizontal CTE >0.999999

Physical Characteristics

Pixel Scale

0.4 arcsecs/pixel on IDS235

0.19 arcsecs/pixel on ISIS Blue

X Pixel size 13.5 microns
Y Pixel size 13.5 microns
X size in pixels of digitised area 2148
Y size in pixels of digitised area 4200
X size of useful imaging area 2048
Y size of useful imaging area 4100
X start of useful imaging area 51
Y start of useful imaging area 0
LN2 capacity of cryostat 2.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD 10 mm
Cryostat window size 36 x 66 mm

Operational Parameters

Operating temperature 153K
Preferred amplifier L( R provides the same performance )
Anti-blooming available no

Measured Characteristics

Quantum Efficiency

Full QE curve for EEV4280 in tabulated form, measured at ATC March 99
 
 
Dark current 4 e/hour @ -120 degrees C
Full well bloom limit  ~150000 electrons
Chip flatness Profile scan shows centre section to be flat to < 1 micron
Cosmetics There are about 2ish pixel/column defects plus a cluster of single pixel  defects. See dark frame.
Cosmic Ray count ~2000 events/chip/hour
Fringing. See below a graph of fringe amplitude vs wavelength for an EEV.



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Last modified: 10 February 2011