EEV9 Parameters
Device Identification
Chip name EEV9
Year of manufacture ?
Serial number ?
Technology ?
Anti reflection coating Metachrome
First light on La Palma Febuary 1995
Description ?
Operational Characteristics
Measurements made on 21/6/95
Speed
|
Slow
|
Standard
|
Quick
|
Turbo
|
Nonastro
|
Bias(ADU)
|
2225
|
4390
|
4169
|
3131
|
2579
|
Gain(e/ADU)
|
0.61
|
0.69
|
0.91
|
1.43
|
2.63
|
Noise(e)
|
3.26
|
4.44
|
4.28
|
6.51
|
11.28
|
Linear to(ADU)
|
|
50k
|
50k
|
30k
|
20k
|
Readout time(s)
|
|
300
|
180
|
150
|
130
|
Vertical CTE 0.99999
Horizontal CTE 0.99999
Physical Characteristics
Pixel Scale (?) ? arc/pixel
Field of view (?) ?
X Pixel size 22.5 microns
Y Pixel size 22.5 microns
X size in pixels of digitised area 2220
Y size in pixels of digitised area 1280
X size of useful imaging area 2186
Y size of useful imaging area 1152
X start of useful imaging area 17
Ystart of useful imaging area 0
LN2 capacity of cryostat 2.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD ? mm
Cryostat window size ?
Operational Parameters
Flooding type none
Operating temperature 147K
Prefered amplifier ?
Network name CCD?
Anti-blooming available no
Orientation of instrument for prefered output
Telemetry values : RD ?V V- ?V H+SL ?V
OD ?V H++ ?V R-SL ?V
OG ?V H- ?V R+SL ?V
VSS ?V R+ ?V
ABG ?V R- ?V
BG ?V V-SL ?V
ABD ?V H-SL ?V
Measured Characteristics
Quantum Efficiency
Peak non-uniformity in QE across chip ?
Dark current ? e/hour
Point spread function ?
Full well bloom limit ?
Chip flatness ? micron ? bow
Cosmetics ?
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