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EEV10 Parameters



Device Identification

Chip name                             EEV10
Year of manufacture                   1997
Serial number                         5383-17-7
First light on La Palma               July 1997
Description                           .
N.B. Available on shared risk basis (no guaranteed performance)
** PLEASE NOTE binning this device causes high readout noise and is therefore not recommended **

Operational Characteristics

     
    Measurements made on UES 7/8/97
    Speed        
    Standard
    Quick
    Turbo
    Nonastro
    Bias(ADU)
    . . . .
    Gain(e/ADU)
    0.75
    0.75
    0.89
    1.19
    Noise(e)
    7.5
    10.9
    12.5
    12.0
    Linear to(ADU)
    . . . .
    Readout time(s)
    300
    210
    180
    160
Standard linearity

Turbo Linearity

Nonastro Linearity
 
 
 

Physical Characteristics

Pixel Scale (isis blue)               0.19 arc/pixel
X Pixel size                          13.5 microns
Y Pixel size                          13.5 microns
X size in pixels of digitised area    2148
Y size in pixels of digitised area    4200
X size of useful imaging area         2048
Y size of useful imaging area         4096
X start of useful imaging area        50
Ystart of useful imaging area         0
LN2 capacity of cryostat              2.5 litres
Cryostat window thickness             4 mm
Distance from window to CCD           . mm
Cryostat window size                  36mm x 66mm

Operational Parameters

Flooding type                         none
Operating temperature                 153K
Prefered amplifier                    L 
(R provides similar performance )
Network name                          CCD1
Anti-blooming available               .
Orientation of instrument for prefered output
Telemetry values :   V+SL   -17.70V      V-    -16.00V
                     V+      -6.00V      V-SL    2.40V
                     RD       2.00V      VSS    -9.00V
                     OG1    -13.00V      V++    -5.00V
                     R-SL     2.00V      R-    -15.00V
                     R+      -5.00V      R+SL  -18.00V
                     ODL      7.00V      ODH    17.50V
                     OG2H   -12.00V      OG2L    3.00V
                     DMP      5.00V      BG      7.00V
                     H+      -5.00V      H++    -2.00V
                     H-SL     2.00V      H-    -14.00V
                                         H+SL  -18.00V

Measured Characteristics

Quantum Efficiency
 
Peak non-uniformity in QE across chip  .
Dark current                           ~0 e/hour
Point spread function                  .
Full well bloom limit                  ~180000 electrons
Chip flatness                          10 micron concave bow
Cosmetics                              5 pixel/column defects


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Last modified: 21 November 2010