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EEV3 Parameters



Device Identification

Chip name                             EEV3
Year of manufacture                   ?
Serial number                         ?
Technology                            ?
Anti reflection coating               Metachrome
First light on La Palma               April 1991
Description                           ?

Operational Characteristics

Measurements made on ISIS red 3/4/95
Speed        
Slow
Standard
Quick
Turbo
Nonastro
Bias(ADU)
3160 
5007
4234
3234
3567
Gain(e/ADU)
0.71
0.79
1.10
1.66
3.27
Noise(e)
3.73
3.47
6.00
9.82
20.5
Linear to(ADU)
60k
60k
60k
40k
25k
Readout time(s)
193
132
77
63
47
Vertical CTE                          0.99999
Horizontal CTE                        0.99999

Physical Characteristics

Pixel Scale (?)                       ? arc/pixel
Field of view (?)                     ?
X Pixel size                          22.5 microns
Y Pixel size                          22.5 microns
X size in pixels of digitised area    1280
Y size in pixels of digitised area    1180
X size of useful imaging area         1242
Y size of useful imaging area         1152
X start of useful imaging area        17
Ystart of useful imaging area         0
LN2 capacity of cryostat              1.5 litres
Cryostat window thickness             4 mm
Distance from window to CCD           ? mm
Cryostat window size                  ?

Operational Parameters

Flooding type                         none
Operating temperature                 147K
Prefered amplifier                    ?
Network name                          CCD1
Anti-blooming available               no
Orientation of instrument for prefered output
Telemetry values :   RD  ?V     V-   ?V     H+SL  ?V
             OD  ?V     H++  ?V     R-SL  ?V
             OG  ?V     H-   ?V     R+SL  ?V
             VSS ?V     R+   ?V
             ABG ?V     R-   ?V
             BG  ?V     V-SL ?V
             ABD ?V     H-SL ?V

Measured Characteristics

Quantum Efficiency                     @400nm 19%
                                       @530nm 38%
                                       @650nm 55%
Peak non-uniformity in QE across chip  ?
Dark current                           8 e/hour
Point spread function                  ?
Full well bloom limit                  ?
Chip flatness                          ? micron ? bow
Cosmetics                              ?


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Last modified: 21 November 2010