LOR1a Parameters

Device Identification

Chip name                             LOR1a

Year of manufacture                   1997

Serial number                         W20-1-1

First light on La Palma               June 1997

Description                           Replacement for failed LOR1 using same cryostat

Operational Characteristics

 

Measurements made in lab.

Speed	Standard	Quick	Turbo
Bias(ADU)	2486	1311	269
Gain(e/ADU)	0.63	0.92	1.41
Noise(e)	6.4	8.1	11.1
Linear to(ADU)	60K (see below)	40K (see below)	25K (see below)
Readout time(s)	.	142	.

Standard linearity

Quick Linearity

Turbo linearity

Vertical CTE                          0.999991

Horizontal CTE                        0.99956

Physical Characteristics

Pixel Scale (isis blue)               0.21 arc/pixel

X Pixel size                          15 microns

Y Pixel size                          15 microns

X size in pixels of digitised area    2148

Y size in pixels of digitised area    2148

X size of useful imaging area         2048

Y size of useful imaging area         2048

X start of useful imaging area        ?

Ystart of useful imaging area         ?

LN2 capacity of cryostat              2.5 litres

Cryostat window thickness             4mm

Distance from window to CCD           . mm

Cryostat window size                  .

Operational Parameters

Flooding type                         .

Operating temperature                 153K

Prefered amplifier                    R

Network name                          CCD2

Anti-blooming available               no

Orientation of instrument for prefered output

Telemetry values :   RD    6.49V     V-   -15.00V     H+SL  -17.99V

 OD    6.99V     H++    0.00V     R-SL    1.59V

 OG  -10.00V     H-   -11.99V     R+SL  -17.99V

 VSS  -6.99V     R+    -1.99V

 ABG -10.00V     R-   -11.99V

 BG    2.99V     V-SL   2.19V

 ABD   6.99V     V+SL -17.50V

 V++  -3.99V     H-SL   1.59V

Measured characteristics

Quantum Efficiency

Peak non-uniformity in QE across chip  .

Dark current                           11 e/hour

Point spread function                  .

Full well bloom limit                  148000 elctrons

Chip flatness                          21 micron convex bow

Cosmetics                              Column defect down centre of chip

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