EEV9 Parameters
Device Identification
Chip name EEV9
Year of manufacture ?
Serial number ?
Technology ?
Anti reflection coating Metachrome
First light on La Palma Febuary 1995
Description ?
Operational Characteristics
Speed |
Slow |
Standard |
Quick |
Turbo |
Nonastro |
Bias(ADU) |
2225 |
4390 |
4169 |
3131 |
2579 |
Gain(e/ADU) |
0.61 |
0.69 |
0.91 |
1.43 |
2.63 |
Noise(e) |
3.26 |
4.44 |
4.28 |
6.51 |
11.28 |
Linear to(ADU) |
50k |
50k |
30k |
20k |
|
Readout time(s) |
300 |
180 |
150 |
130 |
Vertical CTE 0.99999
Horizontal CTE 0.99999
Physical Characteristics
Pixel Scale (?) ? arc/pixel
Field of view (?) ?
X Pixel size 22.5 microns
Y Pixel size 22.5 microns
X size in pixels of digitised area 2220
Y size in pixels of digitised area 1280
X size of useful imaging area 2186
Y size of useful imaging area 1152
X start of useful imaging area 17
Ystart of useful imaging area 0
LN2 capacity of cryostat 2.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD ? mm
Cryostat window size ?
Operational Parameters
Flooding type none
Operating temperature 147K
Prefered amplifier ?
Network name CCD?
Anti-blooming available no
Orientation of instrument for prefered output
Telemetry values : RD ?V V- ?V H+SL ?V
OD ?V H++ ?V R-SL ?V
OG ?V H- ?V R+SL ?V
VSS ?V R+ ?V
ABG ?V R- ?V
BG ?V V-SL ?V
ABD ?V H-SL ?V
Measured characteristics
Quantum Efficiency
Peak non-uniformity in QE across chip ?
Dark current ? e/hour
Point spread function ?
Full well bloom limit ?
Chip flatness ? micron ? bow
Cosmetics ?
This page last updated : 11th Nov. 1997