EEV3 Parameters
Device Identification
Chip name EEV3
Year of manufacture ?
Serial number ?
Technology ?
Anti reflection coating Metachrome
First light on La Palma April 1991
Description ?
Operational Characteristics
Speed |
Slow |
Standard |
Quick |
Turbo |
Nonastro |
Bias(ADU) |
3160 |
5007 |
4234 |
3234 |
3567 |
Gain(e/ADU) |
0.71 |
0.79 |
1.10 |
1.66 |
3.27 |
Noise(e) |
3.73 |
3.47 |
6.00 |
9.82 |
20.5 |
Linear to(ADU) |
60k |
60k |
60k |
40k |
25k |
Readout time(s) |
193 |
132 |
77 |
63 |
47 |
Vertical CTE 0.99999
Horizontal CTE 0.99999
Physical Characteristics
Pixel Scale (?) ? arc/pixel
Field of view (?) ?
X Pixel size 22.5 microns
Y Pixel size 22.5 microns
X size in pixels of digitised area 1280
Y size in pixels of digitised area 1180
X size of useful imaging area 1242
Y size of useful imaging area 1152
X start of useful imaging area 17
Ystart of useful imaging area 0
LN2 capacity of cryostat 1.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD ? mm
Cryostat window size ?
Operational Parameters
Flooding type none
Operating temperature 147K
Prefered amplifier ?
Network name CCD1
Anti-blooming available no
Orientation of instrument for prefered output
Telemetry values : RD ?V V- ?V H+SL ?V
OD ?V H++ ?V R-SL ?V
OG ?V H- ?V R+SL ?V
VSS ?V R+ ?V
ABG ?V R- ?V
BG ?V V-SL ?V
ABD ?V H-SL ?V
Measured characteristics
Quantum Efficiency @400nm 19%
@530nm 38%
@650nm 55%
Peak non-uniformity in QE across chip ?
Dark current 8 e/hour
Point spread function ?
Full well bloom limit ?
Chip flatness ? micron ? bow
Cosmetics ?
This page last updated : 5th Sept. 1997