Device Identification

Chip name                               EEV12

Year of manufacture             1998

Serial number                         A5500-5

First light on La Palma         May 1998

Description                                          .

Operational Characteristics

 
 

Speed	Standard	Quick	Turbo	Binned
Linearity	1% to 65K	1% to 65K	1% to 43K
Bias (ADU)	930	820	670	390
Gain (e/ADU)	1.0	1.2	1.4	1.4
Noise (e)	4.5	4.4	6	5
Readout time (s)	225	180	165

Vertical CTE                                        >0.999998

Horizontal CTE                                     >0.999998

Physical Characteristics

Pixel Scale (isis blue)                            0.19 arcsecs/pixel

X Pixel size                                             13.5 microns

Y Pixel size                                            13.5 microns

X size in pixels of digitised area           2148

Y size in pixels of digitised area          4200

X size of useful imaging area               2048

Y size of useful imaging area                           4100

X start of useful imaging area             50

Y start of useful imaging area             0

LN2 capacity of cryostat                     2.5 litres

Cryostat window thickness                  4 mm

Distance from window to CCD           7.29mm (10.0mm measured optically )

Cryostat window size                            36 x 66 mm

Operational Parameters

Operating temperature                       153K

Preferred amplifier                                L ( R provides the same performance )

Network name                                      CCD1

Anti-blooming available                                  yes

Orientation of instrument for preferred output

Measured characteristics

Quantum Efficiency

Full QE curve for EEV4280 in tabulated form, measured at ATC March 99.
 

Dark current
 

Full well bloom limit        240000 electrons
 
 

Chip flatness                     A one dimensional scan down the central column for the CCD showed a 2 micron bow.

Cosmetics

Cosmic Ray count            1.6 events/cm²/min.

This device currently suffers from a pattern noise of 5-10 ADUs when binned. 16/2/2000