EEV10 Parameters

Device Identification

Chip name                             EEV10

Year of manufacture                   1997

Serial number                         5383-17-7

First light on La Palma               July 1997

Description                           .

N.B.                                  Available on shared risk basis (no guaranteed performance)

** PLEASE NOTE binning this device causes high readout noise and is therefore not recommended **

Operational Characteristics

 

Measurements made on UES 7/8/97

Speed	Standard	Quick	Turbo	Nonastro
Bias(ADU)	.	.	.	.
Gain(e/ADU)	0.75	0.75	0.89	1.19
Noise(e)	7.5	10.9	12.5	12.0
Linear to(ADU)	.	.	.	.
Readout time(s)	300	210	180	160

Turbo Linearity

Nonastro Linearity
 
 
 

Physical Characteristics

Pixel Scale (isis blue)               0.19 arc/pixel

X Pixel size                          13.5 microns

Y Pixel size                          13.5 microns

X size in pixels of digitised area    2148

Y size in pixels of digitised area    4200

X size of useful imaging area         2048

Y size of useful imaging area         4096

X start of useful imaging area        50

Ystart of useful imaging area         0

LN2 capacity of cryostat              2.5 litres

Cryostat window thickness             4 mm

Distance from window to CCD           . mm

Cryostat window size                  36mm x 66mm

Operational Parameters

Flooding type                         none

Operating temperature                 153K

Prefered amplifier                    L (R provides similar performance )

Network name                          CCD1

Anti-blooming available               .

Orientation of instrument for prefered output

Telemetry values :   V+SL   -17.70V      V-    -16.00V

                     V+      -6.00V      V-SL    2.40V

                     RD       2.00V      VSS    -9.00V

                     OG1    -13.00V      V++    -5.00V

                     R-SL     2.00V      R-    -15.00V

                     R+      -5.00V      R+SL  -18.00V

                     ODL      7.00V      ODH    17.50V

                     OG2H   -12.00V      OG2L    3.00V

                     DMP      5.00V      BG      7.00V

                     H+      -5.00V      H++    -2.00V

                     H-SL     2.00V      H-    -14.00V

                                         H+SL  -18.00V

Measured characteristics

Quantum Efficiency

Peak non-uniformity in QE across chip  .

Dark current                           ~0 e/hour

Point spread function                  .

Full well bloom limit                  ~180000 electrons

Chip flatness                          10 micron concave bow

Cosmetics                              5 pixel/column defects

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