Welcome to the Cayman Page


Lets be here again
The material in here will report on our findings with the new EEV42 devices, eventually, enough of that - have a look at the real information. These are just some of the pictures scanned from the photographs taken at StingRay City and during a beach dive made by myself and Paul during Saturday before the hard work started at lunch-time. The camera cost 8 pounds and was useable to the dizzy depths of 12 feet, though it did survive to 60 feet but the wind-on mechanism wouldn't work at that depth.
Enjoy - for those who didnt attend - this is (part of) what you missed. I have used Icons for the real pics which are of the order of 100kbyte each. I do have a few more of Captain Marvels Boat Dive which I will scan and put up over the next few days along with the EEV data (of course).
For those who want to display the full images see View Full Cayman Images



Latest Results from the EEV42 CCD Contract


Tabulated below is a summary of the details made public at the Cayman meeting regarding the noise performance of our EEV42-10 and 42-80 devices. These are 3-side buttable low-noise 4kx2k devices made by EEV for a contract placed between R.G.O.(UK), A.A.T.(Australia) and Galileo(Italy). The output stages consist of a novel design which permits high speed sampling with good noise performance. It is also possible, by manipulating one of the output gate structures to alter the node capacitance and hence change the gain and signal handling capacity.

CCD Temp = -115C
OG2 LOW
Numbers in parentheses in the gain column refer to data
taken with our Iron 55 source.
This device was a FRONT-SIDE, 42-80. EEV have informed me (13/2/97) that the noise on ANY THINNED CCD will be worse than that on an un-thinned device due to fringing fields affecting the node capacitance.
We should expect to measure a 'slightly' higher noise on thinned devices. I do have evidence that this is indeed the case, the latest thinned 42-80 I have do not exhibit the same performance as this device....

CDS(Ref+Sig us) 20 + 20 10 + 10 4 + 4 1 + 1 0.5 + 0.5
Total Noise(T²adu) 19 14 6.5 4.5 2.4
System Noise(S²adu) 4 3.5 3.5 2.5 ?
Gain (G e/adu) 0.5(0.6) 0.6(0.7) 0.94(1.05) 0.2.4 2.9
Read Noise
(sqrt[T²-S²]xG e- rms)
2.0 1.9 1.6 3.5 4




OG2 HIGH
CDS(Ref+Sig us) 20 + 20 10 + 10 4 + 4 1 + 1
Total Noise(T²adu) 18 12 4.5 3.5
System Noise(S²adu) 4 3.5 3.5 2.5
Gain (G e/adu) 1.0 1.2 1.8 4.6
Read Noise
(sqrt[T²-S²]xG e- rms)
4.0 3.6 1.8 4.5

On-chip amp Gain = 0.4 (+/-30%)

'FET' Sensitivity = 5uV/electron (+/-50%)



I am... apo