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EEV13 Parameters with UltraDAS + SDSU Gen.2
Device Identification
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| Chip name | EEV13 |
| Year of manufacture | 1999 |
| Serial number | 7061-8-3 |
| First light on La Palma | July 2001 |
| Description | EEV-4280 thinned and AR coated |
Operational Characteristics
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Noise (ADU) |
3.1 |
2.4 |
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All binning modes up to 5 x 2 have been tested with no increase in noise.
Linearity measured on the 2nd January 2002 using this method
| Vertical CTE | 0.999994 |
| Horizontal CTE | 0.9999974 |
Physical Characteristics
| X Pixel size | 13.5 microns |
| Y Pixel size | 13.5 microns |
| X size in pixels of digitised area | 2148 |
| Y size in pixels of digitised area | 4200 |
| X size of useful imaging area | 2048 |
| Y size of useful imaging area | 4100 |
| X start of useful imaging area | 51 |
| Y start of useful imaging area | 0 |
| LN2 capacity of cryostat | 2.5 litres |
| Cryostat window thickness | 4 mm |
| Distance from window to CCD | 10.4 mm measured optically |
| Cryostat window size | 36 x 66 mm |
Operational Parameters
| Operating temperature | 153K |
| Preferred amplifier | R |
Measured Characteristics
Full QE curve for EEV4280 in tabulated form,
measured at ATC March 99
| Dark current | none measureable @153K |
| Full well bloom limit | 240,000 electrons |
| Chip flatness | |
| Cosmetics
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Using RHS amplifier black columns at 1079, 1080, 1674, 1675, 1676, 1764, 1765, 1766, 1767
See Dark Frame and Flat Field |
| Cosmic Ray count | ~2000 events/chip/hour |
Fringing. See the graph below of fringe amplitude vs wavelength
for an EEV. |
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