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EEV12 Parameters with UltraDAS + SDSU Gen.2


NB these figures refer to eev12 when it was used with a Gen 2 controller. Converted to Gen 3 on the 25th Jan. 2007

Device Identification

Chip name EEV12
Year of manufacture 1998
Serial number A5500-5
First light on La Palma May 1998
Description EEV-4280 thinned and AR coated, converted to run with UltraDAS January 2001.

Operational Characteristics

Speed Slow Fast
Bias (ADU) 1244  810 
Gain (e/ADU) 1.16 2.3
Noise (e) 3.5 6.0
Noise (ADU) 3.0 2.6
Linear to (ADU)
{see graphs below}
63K 63K
Readout time (s) 59 42

Windowing is available.

Linearity

Linearity was measured by R.Hijmering on the 7th January 2002 using this method



 
 
Vertical CTE >0.999998
Horizontal CTE >0.999998

Physical Characteristics

Pixel Scale (isis blue) 0.19 arcsecs/pixel
X Pixel size 13.5 microns
Y Pixel size 13.5 microns
X size in pixels of digitised area 2148
Y size in pixels of digitised area 4200
X size of useful imaging area 2048
Y size of useful imaging area  4100
X start of useful imaging area 51
Y start of useful imaging area 1
LN2 capacity of cryostat 2.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD 10.0mm measured optically 
Cryostat window size 36 x 66 mm

Operational Parameters

Operating temperature 158K
Preferred amplifier R ( L has an HCTE problem at high readout speeds )

Measured Characteristics

Quantum Efficiency

Full QE curve for EEV4280 in tabulated form, measured at ATC March 99.
 

Dark current
 

Temperature
Electrons per pixel per hour
-120C
0.7
-105C
5.1

 
 
Full well bloom limit 240000 electrons
Chip flatness A one dimensional scan down the central column for the CCD showed a 2 micron bow
Cosmetics See Dark frame
Cosmic Ray count ~2000 events/chip/hour at sea level
Fringing See graph of fringe amplitude vs wavelength for EEV12


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Last modified: 21 November 2010