4. Charge Transfer Efficiency

Measured using extended pixel edge response for chip 1 .Lo-Level corresponds to a signal charge of 1600 electrons, Hi-Level to a signal level of 100,000 electrons
 
 
CCD 1 VCTE Lo-Level VCTE Hi-Level HCTE Lo-Level HCTE Hi-Level
Left Output 0.999998 0.999997 0.999997 0.999998
Right Output 0.999998 0.999997 0.999997 0.999998

Chip 2 was measured using the Fe-55 X-ray method:
 
CCD 2 HCTE Lo-Level VCTE Lo-Level
Left Output 0.999997 >0.999999
Right Output >0.999999  

The Fe55 x-ray plots from the left hand amplifier of each chip are shown below.