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EEV13 Parameters with UltraDAS + SDSU Gen.3



Device Identification

Chip name  EEV13
Year of manufacture 1999
Serial number 7061-8-3
First light on La Palma  July 2001
Description EEV-4280 thinned and AR coated .Converted to SDSU Gen.3 February 2007.

Operational Characteristics

Speed 
Slow
Fast
Bias(ADU)
All locations
2250
1750 
Gain(e/ADU)
All locations
 1.2
2.4 
Noise(e)
Laboratory
 4
6.7

Noise (ADU)

3.4

2.8

Noise (e)
Sauron
3.6 to 4.8
 
Noise (ADU)
3.0 to 4.0
 
Noise (e)
PNS right arm
3.6 to 7.2
 
Noise ((ADU)
3.0 to 6.0
 
Linear to (ADU)
All locations
see graph below 
see graph below 
Readout time (s)
All locations
47 
30

The detector noise will be somewhere in the range of values shown above, these values were measured either in the lab. or at the telescope on the instrument noted.

Binning

All binning modes up to 5 x 2 have been tested with no increase in noise.

Linearity


 
Vertical CTE  0.999994
Horizontal CTE  0.9999974

Physical Characteristics

X Pixel size 13.5 microns
Y Pixel size  13.5 microns 
X size in pixels of digitised area  2148
Y size in pixels of digitised area 4200
X size of useful imaging area 2048
Y size of useful imaging area 4100
X start of useful imaging area 51
Y start of useful imaging area 0
LN2 capacity of cryostat 2.5 litres
Cryostat window thickness 4 mm
Distance from window to CCD 10.4 mm measured optically 
Cryostat window size 36 x 66 mm

Operational Parameters

Operating temperature  153K
Preferred amplifier Left

Measured Characteristics

Quantum Efficiency

Full QE curve for EEV4280 in tabulated form, measured at ATC March 99
 
 
 
Dark current  none measureable @153K
Full well bloom limit 240,000 electrons
Chip flatness
Cosmetics
 

 

Using LHS amplifier black columns at   1072, 1073, 476, 477, 478, 385, 386, 387, 388.
See Dark Frame and Flat Field
Cosmic Ray count ~2000 events/chip/hour
Fringing See below a graph of fringe amplitude vs wavelength for an EEV.



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Last modified: 21 November 2010