Device Identification
 

Chip name	LIRIS
Year of manufacture
Serial number
First light on La Palma	3rd March 2004
Description	Rockwell 1024 x 1024 HgCdTe SWIR FPA

Operational Characteristics

 

March 2004

Speed	Slow
Bias(ADU)
Gain(e/ADU) see note 1	3.9-4.1
Noise(e) see note 2
Linear to (ADU) see note 3
Readout time (s)	0.76

Notes:
1. Apparent gain change dependent on pixel signal level occurres as an intrinsic function of the device. As full well is approached, the gain tends towards the lower value.
2. Noise figures given for simple cds frame image readout. Noise can be reduced by using multiple non-destructive readout (mndr) modes.
3. An explanation of method is given here.

NB 'Fast' readout speed is not available.

Not possible with this type of detector
 

Linearity plot

.

Vertical CTE.	Not applicable with this type of detector.
Horizontal CTE	Not applicable with this type of detector.

Physical Characteristics
 
 

X Pixel size	18.5 microns
Y Pixel size	18.5 microns
X size in pixels of digitised area	1024
Y size in pixels of digitised area	1024
X size of useful imaging area	1024
Y size of useful imaging area	1024
X start of useful imaging area	1
Y start of useful imaging area	1
LN2 capacity of cryostat
Pixel Scale Liris at Cass.
Field of view Liris at Cass.

 

Operational Parameters
 
 

Optimum operating temperature

K

 

Measured characteristics

Quantum Efficiency (From Rockwell measurements)

~58% at J (1.2um) , ~58% at H (1.65um) , ~62% at K (2.2um)

Note that the array does not cut off at 800nm. Sensitivity can still be seen at 650nm !
 
 

Dark current
Full well bloom limit
Hot pixels